Hayashi, M., Mamyouda, T., Habuka, H., Ishiguro, A., Ishii, S., Daigo, Y., Ito, H., Mizushima, I. and Takahashi, Y. (2020) Process Design of Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat. ECS Journal of Solid State Science and Technology 9, 104008.
https://doi.org/10.1149/2162-8777/abc3cf

has been cited by the following article:

• TITLE: Recovery Method of Pyrolytic Carbon Surface after Exposure to Chlorine Trifluoride Gas

  AUTHORS: Masaya Hayashi, Keisuke Kurashima, Hitoshi Habuka, Akio Ishiguro, Shigeaki Ishii, Yoshiaki Daigo, Hideki Ito, Ichiro Mizushima, Yoshinao Takahashi

  KEYWORDS: Pyrolytic Carbon, Recovery, Chlorine Trifluoride, Fluorine Out-Diffusion, Annealing

  JOURNAL NAME: Advances in Chemical Engineering and Science, Vol.11 No.1, January 15, 2021

  ABSTRACT: An annealing process was developed for the practical recover of a purified py-rolytic carbon (PPyC) surface from damage, such as color change and peeling, due to fluorination during exposure to chlorine trifluoride gas at high tempera-tures for the cleaning of a silicon carbide chemical vapor deposition reactor. The PPyC surface was annealed at 900°C for 10 min in ambient nitrogen con-taining oxygen at the concentrations of 0.01% - 20%. The rainbow-like colored surface returned to the dark gray color of the original PPyC. Simultaneously, the thin peeled films disappeared. The Raman spectra showed that the PPyC surface chemical bonding returned to that of the original one. The oxygen concentration as low as 0.01% could recover the PPyC surface along with re-ducing the surface pit formation, when the combination of the exposure to chlorine trifluoride gas and the recovery was repeated.