Bousse, L., Mostarshed, S. and Hafeman, D. (1994) Investigation of Carrier Transport through Silicon Wafers by Photocurrent Measurements. Journal of Applied Physics, 75, 4000-4008.
https://doi.org/10.1063/1.356022

has been cited by the following article:

• TITLE: Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

  AUTHORS: Amadou Mar Ndiaye, Sega Gueye, Mame Faty Mbaye Fall, Gora Diop, Amadou Mamour Ba, Mamadou Lamine Ba, Ibrahima Diatta, Lemrabott Habiboullah, Gregoire Sissoko

  KEYWORDS: Silicon Solar Cell, Resonance Frequency, Magnetic Field, Recombination Velocity, Base Thickness

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.12 No.10, October 30, 2020

  ABSTRACT: The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers’ diffusion coefficient (D(ω, B), in the (p) base leads to maximum values (Dmax) at resonance frequencies (ωr). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, ωr and B, are then established, and will be data for industrial development of low-cost solar cells for specific use.