Kato, T., Handa, A., Yagioka, T., Matsuura, T., Yamamoto, K., Higashi, S., Wu, J.L., Tai, K.F., Hiroi, H., Yoshiyama, T., Sakai, T. and Sugimoto, H. (2017) Enhanced Efficiency of Cd-Free Cu(In,Ga)(Se,S)2 Mini-Module via (Zn,Mg)O Second Buffer Layer and Alkali Metal Post-Treatment. IEEE Journal of Photovoltaics, 7, 1773.
https://doi.org/10.1109/JPHOTOV.2017.2745710

has been cited by the following article:

• TITLE: Required CIGS and CIGS/Mo Interface Properties for High-Efficiency Cu(In, Ga)Se2 Based Solar Cells

  AUTHORS: Soumaïla Ouédraogo, Marcel Bawindsom Kébré, Ariel Teyou Ngoupo, Daouda Oubda, François Zougmoré, Jean-Marie Ndjaka

  KEYWORDS: Cu(In, Ga)Se2, Band-Gap, Acceptor Density, Defect Density, Mo/CIGS-Interface

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.10 No.7, July 24, 2020

  ABSTRACT: In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 1016 cm−3 and the defect density less than 1014 cm−3. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe2 layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm2 in the current density (Jsc) depending on the absorber thickness is obtained.