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Irikura, K., Muroi, M., Yamada, A., Matsuo, M., Habuka, H., Ishida, Y., Ikeda, S. and Hara, S. (2018) Advantages of a Slim Vertical Gas Channel at High SiHCl3 Concentrations for Atmospheric Pressure Silicon Epitaxial Growth. Materials Science in Semiconductor Processing, 87, 13-18.
https://doi.org/10.1016/j.mssp.2018.07.006

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