Why Us? >>

  • - Open Access
  • - Peer-reviewed
  • - Rapid publication
  • - Lifetime hosting
  • - Free indexing service
  • - Free promotion service
  • - More citations
  • - Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.


Contact Us >>

WhatsApp  +86 18163351462(WhatsApp)
Paper Publishing WeChat
Book Publishing WeChat
(or Email:book@scirp.org)

Article citations


Ktitorov, S.A., Simin, G.S. and Sindalov, V.Y. (1972) Bragg Reflections and High-Frequency Conductivity of an Electronic Solid-State Plasma. Soviet Physics Solid State, 13, 1872.

has been cited by the following article:

  • TITLE: Semiconductor Fluorinated Carbon Nanotube as a Low Voltage Current Amplifier Acoustic Device

    AUTHORS: D. Sakyi-Arthur, S. Y. Mensah, K. W. Adu, K. A. Dompreh, R. Edziah, N. Mensah, C. Jebuni-Adanu

    KEYWORDS: Carbon Nanotube, Fluorinated, Acoustoelectric Effect, Low Voltage, Acoustic Device

    JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.10 No.1, February 12, 2020

    ABSTRACT: Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime , where q is the acoustic wavenumber and is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density , on (is the electron drift velocity and is the speed of sound in the medium) was observed and depends on the acoustic wave frequency, , wavenumber q, temperature T and the electron-phonon interactions parameter, . When , decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when , rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at T=300K. However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in an FSWCNT platform through acoustoelectric amplification.