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Romanov, Y.A. and Romanova, Y.Y. (2000) Self-Oscillations in Semiconductor Superlattices. Journal of Experimental and Theoretical Physics, 91, 1033-1045.
https://doi.org/10.1134/1.1334994

has been cited by the following article:

  • TITLE: Semiconductor Fluorinated Carbon Nanotube as a Low Voltage Current Amplifier Acoustic Device

    AUTHORS: D. Sakyi-Arthur, S. Y. Mensah, K. W. Adu, K. A. Dompreh, R. Edziah, N. Mensah, C. Jebuni-Adanu

    KEYWORDS: Carbon Nanotube, Fluorinated, Acoustoelectric Effect, Low Voltage, Acoustic Device

    JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.10 No.1, February 12, 2020

    ABSTRACT: Acoustoelectric effect (AE) in a non-degenerate fluorinated single walled carbon nanotube (FSWCNT) semiconductor was carried out using a tractable analytical approach in the hypersound regime , where q is the acoustic wavenumber and is the electron mean-free path. In the presence of an external electric field, a strong nonlinear dependence of the normalized AE current density , on (is the electron drift velocity and is the speed of sound in the medium) was observed and depends on the acoustic wave frequency, , wavenumber q, temperature T and the electron-phonon interactions parameter, . When , decreases to a resonance minimum and increases again, where the FSWCNT is said to be amplifying the current. Conversely, when , rises to a maximum and starts to decrease, similar to the observed behaviour in negative differential conductivity which is a consequence of Bragg’s reflection at the band edges at T=300K. However, FSWCNT will offer the potential for room temperature application as an acoustic switch or transistor and also as a material for ultrasound current source density imaging (UCSDI) and AE hydrophone devices in biomedical engineering. Moreover, our results prove the feasibility of implementing chip-scale non-reciprocal acoustic devices in an FSWCNT platform through acoustoelectric amplification.