Article citationsMore>>

Yu, H., Schaekers, M., Rosseel, E., Peter, A., Lee, J.-G., Song, W.-B., De Meyer, K., et al. (2015) 1.5 × 10−9 Ω cm2 Contact Resistivity on Highly Doped Si:P Using Ge Pre-Amorphization and Ti Silicidation. In: IEEE International Electron Devices Meeting, IEEE, Piscataway, 21-27.
https://doi.org/10.1109/IEDM.2015.7409753

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top