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Diop, M.S., Ba, H.Y., Thiam, N., Diatta, I., Traore, Y., Ba, M.L., Sow, E.H., Mballo, O. and Sissoko, G. (2019) Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect. World Journal of Condensed Matter Physics, 9, 102-111.
https://www.scirp.org/journal/wjcmp
https://doi.org/10.4236/wjcmp.2019.94008
has been cited by the following article:
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TITLE:
Electrical Parameters Determination from Base Thickness Optimization in a Silicon Solar Cell under Influence of the Irradiation Energy Flow of Charged Particles
AUTHORS:
Ousmane Sow, Mamadou Lamine Ba, Mohamed Abderrahim Ould El Moujtaba, Youssou Traore, El Hadji Sow, Cheikh Tidiane Sarr, Masse Samba Diop, Grégoire Sissoko
KEYWORDS:
Silicon Solar Cell, Flow Irradiation Energy, Recombination Velocity, Optimum Base Thickness
JOURNAL NAME:
Energy and Power Engineering,
Vol.12 No.1,
December
31,
2019
ABSTRACT: In this work, we study the characteristics I-V and P-V of a silicon solar cell as well as its fill factor, its electrical power from the optimum thickness obtained in the base under variation of the irradiation energy flow of charged particles. The recombination velocity at the junction corresponding to the maximum power point was also deduced.
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