Cristina Constanta Stanescu (2002) SiO2 sur silicium: Comportement sous irradiation avec des ions lourds. Thèse Doctorat de l’Université de Caen/Basse Normandie.

has been cited by the following article:

• TITLE: Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

  AUTHORS: Mamadou Lamine Ba, Ndeye Thiam, Moustapha Thiame, Youssou Traore, Masse Samba Diop, Mamour Ba, Cheikh Tidiane Sarr, Mamadou Wade, Gregoire Sissoko

  KEYWORDS: Silicon Solar Cell, Irradiation, Recombination Velocity, Base Thickness

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.11 No.10, October 11, 2019

  ABSTRACT: In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.