TITLE:
AC Recombination Velocity in the Back Surface of a Lamella Silicon Solar Cell under Temperature
AUTHORS:
Youssou Traore, Ndeye Thiam, Moustapha Thiame, Amary Thiam, Mamadou Lamine Ba, Marcel Sitor Diouf, Ibrahima Diatta, Oulymata Mballo, El Hadji Sow, Mamadou Wade, Grégoire Sissoko
KEYWORDS:
Vertical Multi-Junctions, Solar Cell, AC Back Surface Recombination Velocity, Temperature, Bode and Nyquist Diagrams
JOURNAL NAME:
Journal of Modern Physics,
Vol.10 No.10,
September
23,
2019
ABSTRACT: The ac recombination velocity of the excess minority carriers, in the back surface of a silicon solar cell with a vertical junction connected in series, is developed through Einstein’s law giving the diffusion coefficient of minority carriers according to temperature, through mobility. The frequency spectrum of both, amplitude and phase, are produced for the diffusion coefficient and the recombination velocity in the rear face, in order to identify the parameters of equivalent electric models.