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https://doi.org/10.1016/S0022-0248(98)80271-6

has been cited by the following article:

• TITLE: Study of Chemical Etching and Chemo-Mechanical Polishing on CdZnTe Nuclear Detectors

  AUTHORS: Aaron L. Adams, Stephen U. Egarievwe, Ezekiel O. Agbalagba, Rubi Gul, Anwar Hossain, Utpal N. Roy, Ralph B. James

  KEYWORDS: CdZnTe, Chemical Etching, Chemo-Mechanical Polishing, Gamma Rays, Nuclear Detectors, X-Ray Photoelectron Spectroscopy

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.7 No.8, August 13, 2019

  ABSTRACT: Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are processes used to smoothen CdZnTe wafer during detector device fabrication. These processes reduce surface damages left after polishing the wafers. In this paper, we compare the effects of etching and chemo-mechanical polishing on CdZnTe nuclear detectors, using a solution of hydrogen bromide in hydrogen peroxide and ethylene glycol mixture. X-ray photoelectron spectroscopy (XPS) was used to monitor TeO2 on the wafer surfaces. Current-voltage and detector-response measurements were made to study the electrical properties and energy resolution. XPS results showed that the chemical etching process resulted in the formation of more TeO2 on the detector surfaces compared to chemo-mechanical polishing. The electrical resistivity of the detector is of the order of 1010 Ω-cm. The chemo-mechanical polishing process increased the leakage current more that chemical etching. For freshly treated surfaces, the etching process is more detrimental to the energy resolution compared to chemo-mechanically polishing.