I. Lin, M. Devincentis, C. Caloz and T. Itoh, “Arbitrary Dual-Band Components Using Composite Right/Left- Handed Transmission lines,” IEEE Transactions on Microwave Theory and Techniques, Vol. 53, April 2005, pp. 1142-1149.

has been cited by the following article:

• TITLE: Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

  AUTHORS: Masoud Sabaghi, Seyed Reza Hadianamrei, Mehdi Rahnama, Maziyar Niyakan Lahiji

  KEYWORDS: ADS, Class F Power Amplifier, LD MOS, WCDMA

  JOURNAL NAME: International Journal of Communications, Network and System Sciences, Vol.4 No.10, October 12, 2011

  ABSTRACT: The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.