Article citationsMore>>

Kuan, T.S. and Iyer, S.S. (1991) Strain Relaxation and Ordering in SiGe Layers Grown on (100), (111), and (110) Si Surfaces by Molecular-Beam Epitaxy. Appl. Phys. Lett., 59, 2242. https://doi.org/10.1063/1.106083

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top