Article citationsMore>>

Yang, Z., Nath, D.N., Zhang, Y.J., Khurgin, B. and Rajan, S. (2015) Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors. IEEE Electron Device Letters, 36, 436-438.

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
Free SCIRP Newsletters
Copyright © 2006-2021 Scientific Research Publishing Inc. All Rights Reserved.