Ganaie, M. and Zulfequar, M. (2015) Study of Density of Localized States in Cd4Se96-xSx (x = 0, 4, 8, 12) Chalcogenide Semiconductor. Journal of Physics and Chemistry of Solids, 85, 51-55.
https://doi.org/10.1016/j.jpcs.2015.04.013

has been cited by the following article:

• TITLE: Structural, Morphology and Some Optical Properties of Chalcogenide Ga80-xSexTe20 (Where x = 10%, 15% and 20%) Glassy Material

  AUTHORS: Khadijah M. Al Mokhtar, Bahia O. Alsobhi

  KEYWORDS: Chalcogenide Glasses, Structure, Optical, Cohesive Energy

  JOURNAL NAME: New Journal of Glass and Ceramics, Vol.7 No.4, October 13, 2017

  ABSTRACT: Ga80-xSexTe20 amorphous system was prepared by conventional technique. Structural, morphology and optical properties have been investigated. X-ray diffraction (XRD) patterns reveal the non-crystalline nature of the prepared sample. Differential thermal analysis (DTA) traces indicate the presence glass transition temperature Tgfor all samples below 500°C. Addition Tg values increases by increasing Se content. Energy dispersive X-ray spectroscopy (EDX) data shows good agreement with actual composition. Moreover, surface characterization was achieved by scanning electron microscope (SEM). The patterns confirmed the non-crystalline nature. In order to analyze the data, the cohesive energy C.E was calculated by all three composition optical properties that have been investigated in the wavelength range 500 - 2500 nm. Reflectivity R and transmitivity T spectrum were used to estimate the band gap energy using UV-Visible absorption spectrum. It is worthy mention that the optical band gap follows the Tg and cohesive energy behavior, where it increases by increasing Se content.