Termentzidis, K., Pokropivny, A., Woda, M., Xiong, S.Y., Chumakov, Y., Cortona, P. and Volz, S. (2012) Structure Impact on the Thermal and Electronic Properties of Bismuth Telluride by Ab-Initio and Molecular Dynamics Calculations. Journal of Physics: Conference Series, 395, Article ID: 012114.
https://doi.org/10.1088/1742-6596/395/1/012114

has been cited by the following article:

• TITLE: Fabrication and Characterization of PLD-Grown Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) Thermoelectric Devices

  AUTHORS: Ibrahim M. Abdel-Motaleb, Syed M. Qadri

  KEYWORDS: Thermoelectric Devices, Bismuth Telluride, Bi2Te3, Antimony Telluride, Sb2Te3, Pulsed Laser Deposition, PLD, Seebeck Effect

  JOURNAL NAME: Journal of Electronics Cooling and Thermal Control, Vol.7 No.3, July 21, 2017

  ABSTRACT: We report on the fabrication and characterization of multi-leg bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric devices. The two materials were deposited, on top of SiO2/Si substrates, using Pulsed Laser Deposition (PLD). The SiO2 layer was used to provide insulation between the devices and the Si wafer. Copper was used as an electrical connector and a contact for the junctions. Four devices were built, where the Bi2Te3 and Sb2Te3 were deposited at substrate temperatures of 100°C, 200°C, 300°C and 400°C. The results show that the device has a voltage sensitivity of up to 146 μV/K and temperature sensitivity of 6.8 K/mV.