Elakkumanan, P., Narasimhan, A. and Sridhar, R. (2003) NC-SRAM—A Low-Leakage Memory Circuit for Ultra Deep Submicron Designs. Proceedings of IEEE International SOC Conference, Portland, 17-20 September 2003, 3-6.
https://doi.org/10.1109/soc.2003.1241450

has been cited by the following article:

• TITLE: SRAM Cell Leakage Control Techniques for Ultra Low Power Application: A Survey

  AUTHORS: Pavankumar Bikki, Pitchai Karuppanan

  KEYWORDS: Body Biasing, Gate Leakage, Junction Leakage, Power Gating, Multi-Threshold, SRAM Cell, Sub-Threshold Leakage

  JOURNAL NAME: Circuits and Systems, Vol.8 No.2, February 28, 2017

  ABSTRACT: Low power supply operation with leakage power reduction is the prime concern in modern nano-scale CMOS memory devices. In the present scenario, low leakage memory architecture becomes more challenging, as it has 30% of the total chip power consumption. Since, the SRAM cell is low in density and most of memory processing data remain stable during the data holding operation, the stored memory data are more affected by the leakage phenomena in the circuit while the device parameters are scaled down. In this survey, origins of leakage currents in a short-channel device and various leakage control techniques for ultra-low power SRAM design are discussed. A classification of these approaches made based on their key design and functions, such as biasing technique, power gating and multi-threshold techniques. Based on our survey, we summarize the merits and demerits and challenges of these techniques. This comprehensive study will be helpful to extend the further research for future implementations.