Zhang, H., Yu, G., Chen, W., Guan, J. and Huang, X. (2015) A First-Principles Investigation on the Effect of the Divacancy Defect on the Band Structures of Boron Nitride (BN) Nanoribbons. Physica E, 69, 65-74. - References

Browse Menu >>

Browse Subjects >>

Computer Science & Communications

Earth & Environmental Sciences

Social Sciences & Humanities

Why Us? >>

- Open Access
- Peer-reviewed
- Rapid publication
- Lifetime hosting
- Free indexing service
- Free promotion service
- More citations
- Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.

Contact Us >>

customer@scirp.org

+86 18163351462(WhatsApp)

1655362766

Paper Publishing WeChat

Book Publishing WeChat

(or Email:book@scirp.org)

Article citations
More>>

Zhang, H., Yu, G., Chen, W., Guan, J. and Huang, X. (2015) A First-Principles Investigation on the Effect of the Divacancy Defect on the Band Structures of Boron Nitride (BN) Nanoribbons. Physica E, 69, 65-74. https://doi.org/10.1016/j.physe.2015.01.024

has been cited by the following article:

TITLE: Effect of Boron (Nitrogen)-Divacancy Complex Defects on the Electronic Properties of Graphene Nanoribbon

AUTHORS: Zhiyong Wang, Junchao Jin, Mengyao Sun

KEYWORDS: Complex Defects, Electronic Properties, Graphene Nanoribbon

JOURNAL NAME: Graphene, Vol.6 No.1, January 19, 2017

ABSTRACT: We report the effect of boron (nitrogen)-divacancy complex defects on the electronic properties of graphene nanoribbon by means of density functional theory. It is found that the defective subbands appear in the conduction band and valence band in accordance with boron (nitrogen)-divacancy defect, respectively; the impurity subbands don’t lead to the transition from the metallic characteristic to a semiconducting one. These complex defects affect the electronic band structures around the Fermi level of the graphene nanoribbon; the charge densities of these configurations have also changed distinctly. It is hoped that the theoretical results are helpful in designing the electronic device.