Oikawa, T., Saijo, Y., Kato, S., Mishima, T. and Nakamura, T. (2015) Formation of Definite GaN p-n Junction by Mg-Ion Im-plantation to n--GaN Epitaxial Layers Grown on a High-Quality Free-Standing GaN Substrate. Nuclear Instruments and Methods in Physics Research B, 365, 168-170. https://doi.org/10.1016/j.nimb.2015.07.095

has been cited by the following article:

• TITLE: Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

  AUTHORS: Hayao Kasai, Takuya Oikawa, Tomoyoshi Mishima, Tohru Nakamura

  KEYWORDS: GaN, MISFET, Mg Ion Implantation, Threshold Voltage

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 4, 2017

  ABSTRACT: This paper demonstrates that threshold voltages of GaN MISFET are controlla-ble by varying the Mg ion doses for Mg ion implantation. Furthermore, it de-monstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 1013/cm2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.