Lee, M.L., Leitz, C.W., Cheng, Z., Antoniadis, D.A. and Fitzgerald, E.A. (2002) Strained Ge Channel p-Type Metal-Oxide-Semiconductor Field-Effect Transistors Grown on Sia a xGex/Si Virtual Substrates.

has been cited by the following article:

• TITLE: Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers

  AUTHORS: Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu

  KEYWORDS: Microwave Plasma Heating, High Hole Mobility, Ge on Si

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.5 No.1, January 4, 2017

  ABSTRACT: We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.