Article citationsMore>>

Huang, S., Shen, B., Xu, F.-J., Lin, F., Miao, Z.-L., Song, J., Lu, L., Cen, L.-B., Sang, L.-W., Qin, Z.-X., Yang, Z.-J. and Zhang, G.-Y. (2009) Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers. Semiconductor Science and Technology, 24, 055005-055009.

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2021 Scientific Research Publishing Inc. All Rights Reserved.