Huang, S., Shen, B., Xu, F.-J., Lin, F., Miao, Z.-L., Song, J., Lu, L., Cen, L.-B., Sang, L.-W., Qin, Z.-X., Yang, Z.-J. and Zhang, G.-Y. (2009) Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers. Semiconductor Science and Technology, 24, 055005-055009.
http://dx.doi.org/10.1088/0268-1242/24/5/055005

has been cited by the following article:

• TITLE: Deep Traps and Parasitic Effects in Al0.25Ga0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

  AUTHORS: Salah Saadaoui, Olfa Fathallah, Mohamed Mongi Ben Salem, Christophe Gaquière, Hassen Maaref

  KEYWORDS: AlGaN/GaN HEMT, Capacitance Hysteresis, Deep Traps, Gate Surface Effect

  JOURNAL NAME: Open Access Library Journal, Vol.2 No.8, August 27, 2015

  ABSTRACT: Hysteresis phenomenon in the capacitance-voltage characteristics under reverse-biased Schottky gate has been investigated for Al0.25Ga0.75N/GaN/SiC structures having three different gate surfaces. This parasitic effect was correlated with the presence of deep levels in our samples. Indeed, we have noticed the presence of two traps named H1 and A1; their respective activation energies, which are determined using capacitance deep level transient spectroscopy (DLTS) are respectively 0.74 and 0.16 eV. The H1 hole trap was associated to extended defect in the Al0.25Ga0.75N/ GaN heterostructure such as threading dislocations and was responsible of capacitance hysteresis phenomenon. The A1 electron trap appears only in the HEMT (1), which has the smaller Schottkycontact area. This trap was related to a punctual defect and attributed to free surface states in the access region between the gate and the source.