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Huang, S., Shen, B., Xu, F.-J., Lin, F., Miao, Z.-L., Song, J., Lu, L., Cen, L.-B., Sang, L.-W., Qin, Z.-X., Yang, Z.-J. and Zhang, G.-Y. (2009) Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers. Semiconductor Science and Technology, 24, 055005-055009.
http://dx.doi.org/10.1088/0268-1242/24/5/055005

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