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Park, Y.S., Lee, M., Jeon, K., Yoon, I.T., Shon, Y., Im, H., Park, C.J., Cho, H.Y. and Han, M.-S. (2010) Deep Level Transient Spectroscopy in Plasma-Assisted Molecular Beam Epitaxy Grown Al0.2Ga0.8N/GaN Interface and the Rapid Thermal Annealing Effect. Applied Physics Letters, 97, 112110-112112.
http://dx.doi.org/10.1063/1.3491798

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