Article citationsMore>>

Saadaoui, S., Ben Salem, M.M., Fathallah, O., Gassoumi, M., Gaquière, C. and Maaref, H. (2013) Leakage Current, Capacitance Hysteresis and Deep Traps in Al0.25Ga0.75N/GaN/SiC High-Electron-Mobility Transistors. Physica B: Condensed Matter, 412, 126-129.
http://dx.doi.org/10.1016/j.physb.2012.11.031

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2021 Scientific Research Publishing Inc. All Rights Reserved.
Top