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Saadaoui, S., Ben Salem, M.M., Fathallah, O., Gassoumi, M., Gaquière, C. and Maaref, H. (2013) Leakage Current, Capacitance Hysteresis and Deep Traps in Al0.25Ga0.75N/GaN/SiC High-Electron-Mobility Transistors. Physica B: Condensed Matter, 412, 126-129.

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