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Saadaoui, S., Ben Salem, M.M., Gassoumi, M., Maaref, H. and Gaquière, C. (2012) Anomaly and Defects Characterization by I-V and Current Deep Level Transient Spectroscopy of Al0.25Ga0.75N/GaN/SiC High Electron-Mobility Transistors. Journal of Applied Physics, 111, 073713-073718.

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