Why Us? >>

  • - Open Access
  • - Peer-reviewed
  • - Rapid publication
  • - Lifetime hosting
  • - Free indexing service
  • - Free promotion service
  • - More citations
  • - Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.


Contact Us >>

WhatsApp  +86 18163351462(WhatsApp)
Paper Publishing WeChat
Book Publishing WeChat
(or Email:book@scirp.org)

Article citations


Ye, R., Baba, M., Ohishi, Y., Mori, K. and Suzuki, K. (2006) On the Correlation between Morphology and Electronic Properties of Fluorinated Copper Phthalocyanine (F16CuPc) Thin Films. Molecular Crystals and Liquid Crystals, 444, 203-210. http://dx.doi.org/10.1080/15421400500364972

has been cited by the following article:

  • TITLE: Temperature Dependence of Electrical Properties of Organic Thin Film Transistors Based on pn Heterojuction and Their Applications in Temperature Sensors

    AUTHORS: Rongbin Ye, Koji Ohta, Mamoru Baba

    KEYWORDS: Organic Thin Film Transistors, pn Heterojunction, Temperature Dependence, Temperature Sensors

    JOURNAL NAME: Journal of Computer and Communications, Vol.4 No.5, May 26, 2016

    ABSTRACT: Organic thin film transistors based on an F16CuPc/α6T pn heterojunction have been fabricated and analyzed to investigate the temperature dependence of electrical properties and apply in temperature sensors. The mobility follows a thermally activated hopping process. At temperatures over 200 K, the value of thermal activation energy (EA) is 40. 1 meV, similar to that of the single-layer device. At temperatures ranging from 100 to 200 K, we have a second regime with a much lower EA of 16.3 meV, where the charge transport is dominated by shallow traps. Similarly, at temperatures above 200 K, threshold voltage (VT) increases linearly with decreasing temperature, and the variations of VT of 0.185 V/K is larger than the variation of VT (~0.020 V/K) in the single layer devices. This result is due to the interface dipolar charges. At temperatures ranging from 100 K to 200 K, we have a second regime with much lower variations of 0.090 V/K. By studying gate voltage (VG)-dependence temperature variation factor (k), the maximum value of k (~0.11 dec/K) could be obtained at VG = 5 V. Furthermore, the pn heterojunction device could be characterized as a temperature sensor well working at low operating voltages.