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M. C. Hugon, F. Delmotte, B. Agiusa and J. L. Courant, “Electrical Properties of Metal–Insulator–Semiconductor Structures with Silicon Nitride Dielectrics Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition Distributed Electron Cyclotron Resonance,” Journal of Vacuum Science & Technology A, Vol. 15, No. 6, 1997, pp. 3143-3154.

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