M. Moser, R. Wienterhoff, C. Geng, J. Quisser, F. Scholz and A. D?rden, “Refractive Index of (AlxGa1?x)0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy,” Applied Physics Letters, Vol. 64, No. 2, 1994, pp. 235-238. doi:10.1063/1.111514

has been cited by the following article:

• TITLE: Structural and Electronic Properties Calculations of Al xIn1-x P Alloy

  AUTHORS: Mohammed Ameri, Ali Bentouaf, Mohammed Doui-Aici, Rabah Khenata, Fatima Boufadi, Amina Touia

  KEYWORDS: AlP, InP, Semiconductors, FP-LMTO, Bowing, Alloys

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.7, July 29, 2011

  ABSTRACT: The equilibrium structure and the electronic properties of III-V zinc-blende AlP, InP semiconductors and their alloy have been studied in detail from first-principles calculations. A full-potential linear muffin-tin-orbital (FP-LMTO) method has been used in conjunction with both the local-density approximation (LDA) and the generalized-gradient approximation (GGA) to investigate the effect of increasing the concentration of aluminum on the structural properties such as the lattice constants and the bulk moduli. Besides, we report the concentration dependence of the electronic band structure, the direct-indirect band gap crossovers and bowing. Using the approach of Zunger and co-workers the microscopic origins of the gap bowing were also explained. A reasonable agreement is found in comparing our results with other theoretical calculations.