Matsushita, H., Jitsukawa, H., Sugano, H., Takizawa, T. and Endo, S. (1997) Electrical and Optical Properties of CuGaSe2 Single Crystals Grown by Solution Method Using CuSe Solvent. Proceedings of the 11th International Conference on Ternary and Multinary Compounds, Salford, 8-12 September 1997, 535.

has been cited by the following article:

• TITLE: Crystal Growth, Structural and Optical Studies of CuGa3Se5 Bulk Compounds

  AUTHORS: Dayane Habib, Georges El Haj Moussa

  KEYWORDS: Chalcopyrite, Photovoltaic, Bulk Materials Photoluminescence, Optical Response, X-Ray Diffraction, Photoconductivity

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.6 No.1, February 3, 2016

  ABSTRACT: Bulk materials were synthesized by the Bridgman technique using the elements Cu, Ga, Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity. Optical response (Photoconductivity) and Photoluminescence (PL) and PL-excitation (PLE) at temperatures from 4.2 to 77 K were also used to estimate the band-gap energy of Cu-Ga3Se5. They show a nearly perfect stoechiometry and present p-type conductivity. CuGa3Se5 either have an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained by Photoconductivity and Photoluminescence (PL) for the different samples is 1.85 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type. The defects that appear are probably GaCu.