Yang, B., Zhang, X.J., Zhang, S.T., Chen, X.Y., Wu, Z.C., Chen, Y.F., Zhu, Y.Y., Liu, Z.G. and Ming, N.B. (2001) In Situ Electrical-Field-Induced Growth and Properties of Bi3TiNbO9 Ferroelectric Thin Films. Applied Physics Letters, 79, 4559. http://dx.doi.org/10.1063/1.1430023

has been cited by the following article:

• TITLE: Enhanced Ferroelectric Properties of Multilayer SBT-BTN Thin Films for NVRAM Applications

  AUTHORS: Oleksandr Khorkhordin, Chia-Pin Yeh, Bodo Kalkofen, Edmund Burte

  KEYWORDS: Ferroelectric, SBT, BTN, MOCVD, Multilayer

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.5 No.4, September 30, 2015

  ABSTRACT: Ferroelectric SrBi2Ta2O9-(Bi4Ti3)1-xNbxO12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C4H9)3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)5(OC2H4OMe)]2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)2(mmp)2] and Niob-ethoxide [Nb(OC2H5)5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800oC consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization () and coercive field (Ec) are 16.2 μC/cm2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (= 6.4 μC/cm2, Ec = 154 kV/cm). In the films prepared above 700oC, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.