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Nanjo, T., Takeuchi, M., Suita, M., Abe, Y., Oishi, T., Abe, Y., Tokuda, Y. and Aoyagi, Y. (2008) Remarkable Breakdown Voltage Enhancement in AlGaN Channel high Electron Mobility Transistors. Applied Physics Letters, 92, Article ID: 263502.
http://dx.doi.org/10.1063/1.2949087

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