Kunitsyna, E.V., L’vova, T.V., Dunaevskii, M.S., Terent’ev, Ya.V., Semenov, A.N., Solov’ev, V.A., Meltser, B.Ya., Ivanov, S.V. and Yakovlev, Yu.P. (2010) Wet Sulfur Passivation of GaSb(100) Surface for Optoelectronic Applications. Applied Surface Science, 256, 5644-5649.
http://dx.doi.org/10.1016/j.apsusc.2010.03.027

has been cited by the following article:

• TITLE: Aqueous Sulfur Passivation of N-Type GaSb Substrates Studied by Photoluminescence Spectroscopy

  AUTHORS: Delia M. Hurtado-Castañeda, José L. Herrera-Perez, José S. Arias-Cerón, Claudia Reyes-Betanzo, Patricia Rodriguez-Fragoso, Julio G. Mendoza-Alvarez

  KEYWORDS: GaSb, Photoluminescence Spectroscopy, Sulfur Passivation

  JOURNAL NAME: Natural Science, Vol.6 No.12, August 15, 2014

  ABSTRACT: In this work the influence of aqueous sulfur passivation on the surface of n-type (100) GaSb single crystals has been studied through low-temperature photoluminescence (PL) characterization. The samples were passivated at different times using aqueous solutions of sodium sulfide. PL spectroscopy was used to determinate the optimum time of sulfur passivation, through the measurement of the PL intensity for the different passivation times. For the samples measured, the PL spectra show the presence of two emission bands, whose intensity and energy position change for the different passivation times of the GaSb samples. According to the PL results, a passivation surface treatment of 6 min shows the highest PL intensity spectrum.