Jeon, S.J., Oh, M., Jeon, H., Hyun, S. and Lee, H.J. (2011) Effects of Post-Annealing on Thermoelectric Properties of Bismuth-Tellurium Thin Films Deposited by Co-Sputtering. Microelectronic Engineering, 88, 541-544.
http://dx.doi.org/10.1016/j.mee.2010.06.036

has been cited by the following article:

• TITLE: Preparation and Characterization of P-Type Bi0.45Sb1.55Te3 Thin Film Using Pulsed CO2 Laser

  AUTHORS: Rakdiaw Muangma, Voravit Kosalathip, Taswal Kumpeerapun, Pichet Limsuwan

  KEYWORDS: Laser Ablation, Pulsed CO2 Laser, Bismuth Antimony Telluride, Thermoelectric Thin Film

  JOURNAL NAME: Materials Sciences and Applications, Vol.5 No.5, April 15, 2014

  ABSTRACT: P-type Bi0.45Sb1.55Te3 thermoelectric material was synthesized using cold pressing process. The obtained sample was prepared in the form of pellet with a diameter of 10 mm and 2 mm thick and used as a target for laser ablation. The laser source was a pulsed CO2 laser working at a wavelength of 10.6 μm with a laser energy density of 2 J/cm2 per pulse. P-type Bi0.45Sb1.55Te3 thermoelectric thin films were deposited on Si substrates for different ablation times of 1, 2 and 3 h. The cross-section and surface morphologies of the thermoelectric films were investigated using field emission scanning electron microscopy (FE-SEM). The results show that the thickness and average particle size of the films increased from 35 to 58 nm, and 28 to 35 nm, respectively, when the ablation time was increased from 1 to 3 h. The crystalline structure of the TE films was investigated by X-ray diffraction (XRD).