Why Us? >>

  • - Open Access
  • - Peer-reviewed
  • - Rapid publication
  • - Lifetime hosting
  • - Free indexing service
  • - Free promotion service
  • - More citations
  • - Search engine friendly

Free SCIRP Newsletters>>

Add your e-mail address to receive free newsletters from SCIRP.


Contact Us >>

WhatsApp  +86 18163351462(WhatsApp)
Paper Publishing WeChat
Book Publishing WeChat
(or Email:book@scirp.org)

Article citations


Laboutin, O., Cao, Y., Johnson, W., Wang, R., Li, G., Jena, D. and Xing, H., (2012) InGaN Channel High Electron Mobility Transistor Structures Grown by Metal Organic Chemical Vapor Deposition. Applied Physics Letters, 100, 121909-121911. http://dx.doi.org/10.1063/1.3697415

has been cited by the following article: