TITLE:
Synthesis and Characterization of Metal Organic Chemical Vapour Deposited Copper Titanium Oxide (Cu-Ti-O) Thin Films from Single Solid Source Precursor
AUTHORS:
Oladepo Fasakin, Marcus Adebola Eleruja, Olumide Oluwole Akinwunmi, Bolutife Olofinjana, Emmanuel Ajenifuja, Ezekiel Oladele Bolarinwa Ajayi
KEYWORDS:
Thin Film; Copper Titanium Oxide; Metalorganic Chemical Vapour Deposition (MOCVD)
JOURNAL NAME:
Journal of Modern Physics,
Vol.4 No.12C,
December
25,
2013
ABSTRACT:
Thin films of copper titanium oxide were deposited by metal organic chemical vapour deposition technique from the synthesized single solid source precursor, copper titanium acetylacatonate Cu [Ti(C5H7O2)3] at the deposition temperature of 420°C. The deposited films were characterized using Rutherford Backscattering Spectroscopy, Scanning Electron Microscopy with Energy Dispersive X-Ray facility attached to it, X-Ray Diffractometry, UV-Visible Spectrometry and van-der Pauw Conductivity measurement. Results show that the thickness of the prepared film is determined as 101.236 nm and the film is amorphous in structure, having average grain size of approximately 1 μm. The optical behaviour showed that the absorption edge of the film was at 918 nm near infrared with corresponding direct energy band gap of 1.35 eV. The electrical characterization of the film gave the values of resistivity, sheet resistance and conductivity of the film as 3.43 × 10-1 Ω-cm, 3.39 × 106 Ω/square and 2.91 (Ω-cm)-1 respectively.