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S. M. Han and E. S. Aydil, “Study of Surface Reactions during Plasma Enhanced Chemical Vapor Deposition of SiO2 from SiH4, O2, and Ar plasma,” Journal of Vacuum Science & Technology A, Vol. 14, No. 4, 1996, 9 p. doi.:10.1116/1.580082

has been cited by the following article:

  • TITLE: Dust Plasma Effect on the Etching Process of Si[100] by Ultra Low Frequency RF Plasma

    AUTHORS: Ahmed Rida Galaly, Farouk Fahmi Elakshar

    KEYWORDS: Dust Plasma; Ultra Low Frequency; Ion Etching; Ion Chemical Etching; Volumetric Rate of Loss

    JOURNAL NAME: Journal of Modern Physics, Vol.4 No.2, February 19, 2013

    ABSTRACT: Dust-plasma interactions play vital roles in numerous observed phenomena in the space environment, their scope in the industrial laboratory has grown rapidly in recent times to include such diverse areas as materials processing, microelectronics, lighting and nuclear fusion. The etching processes of Si wafer has been studied using Ultra low frequency RF plasma (ULFP) at (1 KHz) by two different techniques namely: ion etching using inert gas only (e.g., argon gas), and ion chemical etching using an active gas (beside the inert gas) such as oxygen. In the case of large dust particle, the dust might act as a floating body in the plasma collecting equal fluxes of electrons and ions. The velocity of the ions flux out from the mesh (cathode) and cause ion sputtering for the sample (Si-Wafer) measured, moreover the rate coefficient for collection of electrons and ions by dust (K) is calculated here, the presence of dust, however, may itself cause loss process. As the plasma density increases, the etching rate increases and the volumetric rate of loss of electron and ions due to dust particle increases (K). A comparison between the volumetric rate of loss (K) due to ion chemical etching (75% Ar/25% O2) and ion etching (Pure Ar) has been carried out.