G. A. Tarnavsky and V. S. Anishchik, “Toolbox NanoMod for Computer Support of the Design of Nano- Structured Semiconductor Materials,” Computational Methods and Programming, in Russian, Vol. 10, Section 2, 2009, p. 3450.

has been cited by the following article:

• TITLE: Dopant Implantation into the Silicon Substrate with Non-Planar Surface

  AUTHORS: Gennady A. Tarnavsky, Evgenii V. Vorozhtsov

  KEYWORDS: Computer Modeling, Silicon Doping, Implantation, Donor, Acceptor Dopants

  JOURNAL NAME: Energy and Power Engineering, Vol.2 No.2, May 28, 2010

  ABSTRACT: The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.