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Pearton, S.J., Abernathy, C.R., Thaler, G.T., Frazier, R.M., Norton, D.P., Ren, F., Park, Y.D., Zavada, J.M., Buyanova, I.A., Chen, W.M. and Hebard, A.F. (2004) Wide Bandgap GaN-Based Semiconductors for Spintronics. Journal of Physics: Condensed Matter, 16, R209.
http://dx.doi.org/10.1088/0953-8984/16/7/r03

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