Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

Masoud Sabaghi, Seyed Reza Hadianamrei, Mehdi Rahnama, Maziyar Niyakan Lahiji
DOI: 10.4236/ijcns.2011.410081                

Abstract

The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.

Keywords

ADS, Class F Power Amplifier, LD MOS, WCDMA

Conflicts of Interest

The authors declare no conflicts of interest.

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