New Analysis to Measure the Capacitance and Conductance of MOS Structure toward Small Size of VLSI Circuits
Wagah Farman Mohammad
DOI: 10.4236/cs.2011.23022   PDF    HTML     4,608 Downloads   8,540 Views   Citations


In this research thin film layers have been prepared at alternate layers of resistive and dielectric deposited on appropriate substrates to form four – terminal R-Y-NR network. If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of analysis has been proposed to measure the shunt capacitance and the shunt conductance of certain MOS samples. Mat lab program has been used to compute shunt capacitance and shunt conductance at different frequencies. The results computed by this method have been compared with the results obtained by LCR meter method and showed perfect coincident with each other.

Share and Cite:

W. Mohammad, "New Analysis to Measure the Capacitance and Conductance of MOS Structure toward Small Size of VLSI Circuits," Circuits and Systems, Vol. 2 No. 3, 2011, pp. 145-150. doi: 10.4236/cs.2011.23022.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] A. Meinertzhgen, C. Petit, M. Jourdain and F. Mondon, “Anode Hole Injection and Stress Induced Leakage Current Decay in Metal-Oxide-Semiconductor Capacitors,” Solid-State Electronics, Vol. 44, No. 4, 2000, pp. 623-630. doi:10.1016/S0038-1101(99)00309-3
[2] J. Singh, “Semiconductor Optoelectronics, Physics & Technology,” McGraw-Hill, New York, 1995.
[3] W. Monch, “Electronic Properties of Ideal and Interface-Modified Metal-Semiconductor Interface,” Journal of Vacuum Science & Technology B, Vol. 14, No. 4, 1996, p. 2985. doi:10.1116/1.588947
[4] B. B. Woo and J. M. Bartlemay, “Characteristics and Applications of a Tapered, Thin Film Distributed Parameter Structure,” IEEE International Convention Record, Vol. 11, No. 2, 1963, pp. 56-75.
[5] K. U. Ahmed, “The Two Port Four Terminal Matrix Parameter Functions of Solvable Distributed Parameter Z-Y-KZ Network,” IEEE Transactions on Circuit Theory, Vol. 19, No. 5, 1972, pp. 506-508. doi:10.1109/TCT.1972.1083528
[6] P. L. Swart and C. K. Campbell, “Effect of Losses and Parasitic on a Voltage-Controlled Tunable Distributed RC Notch Filter,” IEEE Journal of Solid-State Circuits, Vol. 8, No. 1, 1973, pp. 35-36.
[7] K. U. Ahmed, “Two Port Sub-networks of Exponential Distributed Parameter Z-Y-KZ and Y-Z-KY Micro-circuits with Similar Transfer Functions,” Micro Electron Reliable, Vol. 21, No. 2, 1981, pp. 235-239.
[8] K. U. Ahmed, “A New Band-Reject Filter Configuration of Three-Layer Thin-Film Exponential R-C-KR,” Micro Electron Reliable, Vol. 21, No. 2, 1981, pp. 241-242.
[9] P. Olivo, T. N. Nguyen and B. Ricco, “High-Field Induced Degradation in Ultra-thin SiO2 Films,” IEEE Transactions on Electron Devices, Vol. 35, No. 12, 1988, pp. 2259-2267. doi:10.1109/16.8801

Copyright © 2024 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.