Growth Mechanism of Zno Films Deposited by Spray Pyrolysis Technique

Bhavana Godbole, Nitu Badera, Shyambihari Shrivastava, Deepti Jain, Vganesan Ganesan
DOI: 10.4236/msa.2011.26088                

Abstract

Transparent Zinc Oxide (ZnO) thin films having different thickness are prepared by using spray pyrolysis technique. Structural and morphological behavior has been studied by using atomic force microscopy and x-ray diffraction. The scaling behavior obtained by using height-height correlation method shows that, films with different thickness are developed under non-equilibrium condition behaves as self-affine surfaces. With the increase in thickness, the grain size as well as activation energy have found to be decreased.

Keywords

Nano-Crystalline Materials, Thin Film, Atomic Force Microscope, Structure and Morphology, Thickness

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	T. Lamara, M. Belmahi, O. Elmazria, L. Le Brizoual, J. Bougdira, M. Re’ my and P. Alnot, Freestanding CVD diamond elaborated by pulsed-microwave-plasma for ZnO/diamond SAW devices, Diamond and Related Materials, Vol. 3 (4-8), 2004, pp. 581.
[2]	Teresa M. Barnes, Jacquelyn Leaf, Cassandra Fry and Colin A. Wolden, “Room temperature chemical vapor deposition of c-axis ZnO” Journal of Crystal Growth Vol. 74, 2005, pp. 412-417.
[3]	A. Bougrinea, A. Hichoub, M. Addou, J. Ebothe′ c, A. Kachouanea and M. Troyonc, “Structural,optical and cathodoluminescence characteristics of undoped andtin-doped ZnO thin films prepared by spray pyrolysis” Mater. Chem. Phys. Vol.80, 2003, pp. 438.
[4]	S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lua and H. Shen, “ZnO Schottky Ultraviolet Photodetectors,” J. Cryst. Growth Vol. 225, 2001, pp. 110-113.
[5]	J.Q. Xu, Y.Q. Pan, Y.A. Shun and Z.-Z. Tian, “Grain Size Control and Gas Sensing Properties of ZnO Gas Sensor,” Sens. Actuators B, Vol.66, 2000, pp. 277-279.
[6]	M. Joseph, H. Tabata, H. Saeki, K. Ueda and T. Kawai, “Fabrication of the low-resistive p-type ZnO by codoping method” Physica B, Vol. 302-303, 2001, pp. 140.
[7]	J.M. Bian, X.M. Li, X.D. Gao W.D. Yu and L.D. Chen “Deposition and electrical properties of N–In codoped p-type ZnO films by ultrasonic spray pyrolysis”, Appl. Phys. Lett. Vol. 84, 2004, pp. 541.
[8]	J.M. Bian, X.M. Li, C.Y. Zhang, W.D. Yu, and X.D. Gao, “Synthesis and characterization of two-layer-structured ZnO p–n homojunctions by ultrasonic spray pyrolysis”, Appl. Phys. Lett. Vol. 84, 2004, pp. 3783-3785.
[9]	C.Y. Zhang, X.M. Li, J.M. Bian, W.D. Yu, and X.D. Gao: “Structural and electrical properties of nitrogen and aluminum codoped p-type ZnO films”. Solid State Commun. Vol. 132, 2004, pp.75.
[10]	J.F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet and Y. Marfaing, “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy”, Appl. Phys. Lett. Vol. 83, 2003, pp. 287.
[11]	C.C. Lin and S.Y. Chen, “Properties of nitrogen-implanted p-type ZnO films grown Si3N4/Si by radio-frequency magnetron sputtering”, Appl. Phys. Lett. Vol. 84, 2004, pp.5040.
[12]	K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga and A. Shimizu. “Growth of p-Type Zinc oxide Films by. Chemical Vapor Deposition”, Jpn. J. Appl. Phys. Vol. 36, 1997, pp. L1453.
[13]	T.M. Barnes, K. Olson, and C.A. Wolden, “On the formation and stability of p-type conductivity in nitrogen doped zinc oxide” Appl. Phys. Lett. Vol.86, 2005, pp. 112112.
[14]	G.K. Paul and S.K. Sen, “Sol-gel preparation, characterization and studies on electrical and thermoelectrical properties of gallium doped zinc oxide films”. Mater. Lett. Vol. 57, 2002, pp. 742.
[15]	J.M. Bian, X.M. Li, C.Y. Zhang, W.D. Yu, and X.D. Gao, “p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions” Appl. Phys. Lett. Vol. 85, 2004, pp. 4070.
[16]	Suchea M and Kiriakidis, “Surface characterization of ZnO transparent thin films” Journal of Physics: Conference Series Vol. 10, 2005, pp. 147-150.
[17]	F. Matsukura, H. Ohno, A. Shen and Y. Sugawara, “Transport propertiesand origin of ferromagnetism in (Ga Mn) As”, Phys. Rev. B, Vol. 57, 1998, pp. R2037.
[18]	F. Family, “Dynamic Scaling and Phase-Transitions in Interface Growth”, Physica A Vol. 168, 1990, pp. 561.
[19]	M. Kardar, G. parisi and Y. C. Zhang, “Dynamic scaling of growing interfaces,” Phys. Rev. Lett. Vol. 56, 1986, pp. 889.
[20]	Tae-Bong Hur, Yoon-Hwae Hwang, Hyung-Kook Kim and Hong-Lee Park, “Study of the structural evolution in ZnO thin film by in situ synchrotron x-ray scattering” J. Appl. Phys. Vol. 96, No. 3, 2004, pp. 1740.