[1]
|
A. M. Rinaldi and D. Crippa, “Silicon Epitaxy (Editor: D. Crippa, D. L. Rode and M. Masi),” Chapter 1, Academic Press, San Diego, 2001, p. 1.
doi:10.1016/S0080-8784(01)80179-4
|
[2]
|
K. Maeda, “VLSI & CVD,” Maki Shoten, Tokyo, 1997.
|
[3]
|
D. Shen, H. Zhang, Q. Kang, H. Zhang and D. Yuan, “Oscillating Frequency Response of a Langasite Crystal Microbalance in Liquid Phases,” Sensors and Actuators B, Vol. 119, No. 1, 2006, pp. 99-104.
doi:10.1016/j.snb.2005.12.001
|
[4]
|
M. Schulz, J. Sauerwald, H. Seh H. Fritze and H. L. Tuller, “Defect Chemistry Based Design of Monolithic Langasite Structures for High Temperature Sensors,” Solid State Ionics, Vol. 184, No. 1, 2011, pp. 78-82.
doi:10.1016/j.ssi.2010.08.009
|
[5]
|
H. Habuka and K. Kote, “Development of Reactive Surface Preparation for Room Temperature Silicon Carbide Film Deposition from Monomethylsilane Gas,” Japanese Journal of Applied Physics, Vol. 50, No. 9, 2011, pp. 1-4.
doi:10.1143/JJAP.50.096505
|
[6]
|
H. Habuka and Y. Tanaka, “Langasite Crystal Microbalance Used for in-Situ Monitoring of Amorphous Silicon Carbide Film Deposition,” ECS Journal of Solid State Science and Technology, Vol. 1, No. 2, 2012, pp. 62-65.
doi:10.1149/2.006202jss
|
[7]
|
H. Habuka, T. Nagoya, M. Mayusumi, M. Katayama, M. Shimada and K. Okuyama, “Model on Transport Phenomena and Epitaxial Growth of Silicon Thin Film in SiHCl3-H2 System under Atmospheric Pressure,” Journal of Crystal Growth, Vol. 169, No. 1, 1996, pp. 61-72.
doi:10.1016/0022-0248(96)00376-4
|
[8]
|
H. Habuka, T. Otsuka and M. Katayama, “In Situ Cleaning Method for Silicon Surface Using Hydrogen Fluoride Gas and Hydrogen Chloride Gas in a Hydrogen Ambient,” Journal of Crystal Growth, Vol. 186, No. 1, 1998, pp. 104-112. doi:10.1016/S0022-0248(97)00469-7
|
[9]
|
H. Habuka, Y. Ando and M. Tsuji, “Room Temperature Process for Chemical Vapor Deposition of Silicon Carbide Thin Film Using Monomethylsilane Gas,” Surface and Coatings Technology, Vol. 206, No. 1, 2011, pp. 1503-1506. doi:10.1016/j.surfcoat.2011.09.037
|
[10]
|
H. Habuka H. Ohmori and Y. Ando, “Silicon Carbide Film Deposition at Low Temperatures Using Monomethylsilane Gas,” Surface and Coatings Technology, Vol. 204, No. 1, 2010, pp. 1432-1437.
doi:10.1016/j.surfcoat.2009.09.044
|
[11]
|
H. Habuka and Y. Ando, “Mechanism of Silicon Carbide Film Deposition at Room Temperature Using Monomethylsilane Gas,” Journal of The Electrochemical Society, Vol. 158, No. 4, 2011, pp. H352-H357.
doi:10.1149/1.3545071
|
[12]
|
H. Habuka, M. Watanabe, Y. Miura, M. Nishida and T. Sekiguchi, “Polycrystalline Silicon Carbide Film Deposition Using Monomethylsilane and Hydrogen Chloride Gases,” Journal of Crystal Growth, Vol. 300, No. 1, 2007, pp. 374-381. doi:10.1016/j.jcrysgro.2007.01.003
|
[13]
|
H. Habuka, M. Watanabe, M. Nishida and T. Sekiguchi, “Polycrystalline Silicon Carbide Film Deposition Using Monomethylsilane and Hydrogen Chloride Gases,” Surface and Coatings Technology, Vol. 201, No. 1, 2007, pp. 8961-8965. doi:10.1016/j.surfcoat.2007.04.023
|
[14]
|
G. Sauerbrey, “Verwendung von Schwingquarzen zur W?gung dünner Schichten und zur Mikrow?gung,” Zeitschrift fur Physik, Vol. 155, No. 2, 1959, pp. 206-222.
doi:10.1007/BF01337937
|
[15]
|
K. Senthil, H. Nakazawa and M. Suemitsu, “Adsorption and Desorption Kinetics of Organosilanes at Si(001) Surfaces,” Japanese Journal of Applied Physics, Vol. 42, No. 11, 2003, pp. 6804-6808. doi:10.1143/JJAP.42.6804
|