Mechanical and Dielectric Properties of InTe Crystals


The mechanical properties of indium telluride (InTe) crystals grown by the Bridgman technique were investigated at room temperature using a Vickers hardness tester. The microhardness is observed to vary nonlinearly with the applied load, 10 - 100 g. The cleaved ingots are found to have high value of microhardness (222.44 kg/mm2 at a load of25 g), which reflects an appreciable degree of strength due to their covalent bonding and homogeneity. The studies revealed that the dislocations in the grown crystals offered a resistance to fresh dislocations due to interaction. At higher loads, plastic deformation induces by slip, exhibiting a decrease in hardness from the peak value. The dielectric constant and dielectric loss of indium telluride crystals were evaluated in the frequency range, 1 kHz - 1 MHz for different temperatures (35oC - 140oC). The frequency dependence of AC conductivity was analyzed as a function of temperature. The effect of temperature and frequency on the dielectric response of InTe crystals has been assessed on their cleavage faces and the obtained results are discussed.

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Mathew, T. , Kunjomana, A. , Munirathnam, K. , Chandrasekharan, K. , Meena, M. and Mahadevan, C. (2012) Mechanical and Dielectric Properties of InTe Crystals. Crystal Structure Theory and Applications, 1, 79-83. doi: 10.4236/csta.2012.13015.

Conflicts of Interest

The authors declare no conflicts of interest.


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