Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON

Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi

Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia.

DOI: 10.4236/wjnse.2012.24023                

Abstract

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.

Keywords

Multi Tunnel Junctions (MTJs); Coulomb Blockade Effect; Effective Capacitances; SIMON Simulator

Conflicts of Interest

The authors declare no conflicts of interest.

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