Structural and microstructural characteristics of B-doped PbTe semiconductor

Jovica N. Stojanovic

Institute for Technology of Nuclear and Other Raw Mineral Materials, Applied Mineralogy Unit, Franche d‘Eperey 86, P.O. Box 390, 11000 Belgrade, Serbia.

DOI: 10.4236/jmmce.2006.52010                

Abstract

The main task of this paper was accurate determination of structural and microstructural parameters of B-doped PbTe semiconductor (“p” type). Four samples (undoped PbTe, and three doped with initial B contents: 1 %, 3 % and 8 %) were synthesized using the Bridgman method and analysed using X-ray powder diffraction (XRD) technique. Structural features were obtained using the Rietveld method and microstructural by diffraction-line broadening methods. Microstructural measurements contain both crystallite domain sizes and microstrain calculations obtained by the Warren-Averbach and the simplified integral-breadth methods.

Keywords

B-doped PbTe semiconductor, the Rietveld method, microstructural measurements.

Conflicts of Interest

The authors declare no conflicts of interest.

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