Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces


We investigated the electrical contact characteristics of indium tin oxide (ITO)/doped hydrogenated amorphous silicon (a-Si:H) junctions. For efficient collection of photo-generated carriers, photovoltaic and photodetector devices require good ohmic contacts with transparent electrodes. The amorphous-Si thin films were sputter deposited on ITO coated glass substrates. As-deposited p-type a-Si:H on ITO formed nearly ohmic type contacts and further annealing did not improve the contact characteristics. On the other hand, as-deposited n-type a-Si:H on ITO formed an ohmic contact, while further annealing resulted in a Schottky type contact. The ITO contact with p-type silicon semiconductor is a ro-bust ohmic contact for Si based optoelectronic devices.

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G. G. Pethuraja, R. E. Welser, A. K. Sood, C. Lee, N. J. Alexander, H. Efstathiadis, P. Haldar and J. L. Harvey, "Current-Voltage Characteristics of ITO/p-Si and ITO/n-Si Contact Interfaces," Advances in Materials Physics and Chemistry, Vol. 2 No. 2, 2012, pp. 59-62. doi: 10.4236/ampc.2012.22010.

Conflicts of Interest

The authors declare no conflicts of interest.


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