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N. Saputra, M. Danesh, A. Baiano, R. Ishihara, J. R. Long, N. Karaki and S Inoue, “An Assessment of μ-Czo-chral- ski, Single-Grain Silicon Thin-Film Transistor Techno- logy for Large-Area, Sensor and 3-D Electronic Integra-tion,” IEEE Journal of Solid-State Circuits, Vol. 43, No. 7, 2008, pp. 1563-1576. doi:10.1109/JSSC.2008.922404
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R. Ishihara, , P. C. van der Wilt, B. D. van Dijk, A. Burtsev, J. W. Metselaar and C. I. M. Beenakker, “Advanced Excimer-Laser Crystallization Process for Single-Crys- talline Thin Film Transistors,” Thin Solid Films, Vol. 427, No. 1-2, 2003, pp. 77-85.
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V. Rana, R. Ishihara, Y. Hiroshima, D. Abe, S. Inoue, T. Shimoda, W. Metselaar and K. Beenakker, “Dependence of Single-Crystalline Si TFT Charac-teristics on the Chan- nel Position inside a Location-Controlled Grain,” IEEE Transactions on Electron Devices, Vol. 52, No. 12, 2005, pp. 2622-2628. doi:10.1109/TED.2005.859689
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R. Ishihara, D. Danciu, F. Tichelaar, M. He, Y. Hiroshima, S. Inoue, T. Shimoda, J.W. Metselaar and C. I. M. Be- enakker, “Microstructure Characterization of Location- Controlled Si-Islands Crystallized by Excimer Laser in the μ-Czochralski (Grain Filter) Process,” Journal of Crystal Growth, Vol. 299, No. 2, 2007, pp. 316-321.
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K. Matsuki, R. Saito, S. Tsukamoto and M. Kimura, “Two-Dimensional Simulator of Laser Crystallization for Polycrystalline-Silicon Thin-Film Transistors,” IEEE Tran- sactions on Semiconductor Manufac-turing, Vol. 24, No. 3, 2011, pp. 472-476. doi:10.1109/TSM.2011.2154368
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R. Vikas, R. Ishihara, Y. Hiroshima, D. Abe, S. Inoue, T. Shimoda, W. Metselaar and K. Beenakker, “Capping Layer on Thin Si Film for μ-Czochralski Process with Excimer Laser Crystallization,” Japanese Journal of Applied Physics, Vol. 45, No. 5B, 2006, pp. 4340-4343.
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