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Temperature and Doping Dependencies of the Transport Properties within GaN and GaAs

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Temperature and doping dependencies of the transport properties have been calculated using an ensemble Monte Carlo simulation. We consider the polar optical phonon, acoustic phonons, piezoelectric, intervalley scatterings and Charged impurity scattering model of Ridley; furthermore, a non nonparabolic three-valley model is used. Our simulation results have shown that the electron velocity in GaN is less sensitive to changes in temperature than that associated with GaAs. Also it is found that GaN exhibits high peak drift velocity at room temperature, 2.8 × 10

^{5}m/s, at doping concentration of 1 × 10^{20}m^{–3}and the electron drift velocity relaxes to the saturation value of 1.3 × 10^{5}m/s which is much larger than that of GaAs. The weakening of the phonon emission rate at low temperature explains the extremely high low field mobility. Our results suggest that the transport characteristics of GaN are superior to that of GaAs, over a wide range of temperatures, from 100 K to 700 K, and doping concentrations, up to 1 × 10^{25}m^{–3}Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

F. El-Ela and A. Mohamed, "Temperature and Doping Dependencies of the Transport Properties within GaN and GaAs,"

*Journal of Modern Physics*, Vol. 2 No. 11, 2011, pp. 1324-1330. doi: 10.4236/jmp.2011.211164.

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