Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements
M. Charfeddine, Malek Gassoumi, H. Mosbahi, C. Gaquiére, M. A. Zaidi, H. Maaref
DOI: 10.4236/jmp.2011.210152   PDF   HTML   XML   8,207 Downloads   17,289 Views   Citations


We investigate high electron mobility transistors (HEMT’s) based on AlGaN/GaN grown by molecular beam epitaxy on Silicon substrates. The improvement of the performances of such transistors is still subject to the influence of threading dislocations and point defects which are commonly observed in these devices. Deep levels in FAT-HEMT’s are characterized by using Capacitance-Voltage (C-V) measurements, from which we can extract the barrier height and the donor concentration in the AlGaN layer. Deep Level Transient Spectroscopy (DLTS) Technique is also employed to identify defects in the heterostructure. Measurements reveal the presence of one electron trap with the activation energy E1 = 0.30 eV and capture cross-section σn = 3.59 10–19cm2. The localization and the identification of this trap have been discussed.

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M. Charfeddine, M. Gassoumi, H. Mosbahi, C. Gaquiére, M. Zaidi and H. Maaref, "Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements," Journal of Modern Physics, Vol. 2 No. 10, 2011, pp. 1229-1234. doi: 10.4236/jmp.2011.210152.

Conflicts of Interest

The authors declare no conflicts of interest.


[1] P. Omling, E. R. Weber, L. Montelius, H. Alexander and J. Michel, “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon,” Physical Review B, Vol. 32, No. 20, 1985, pp. 6571-6581. doi:10.1103/PhysRevB.32.6571
[2] M. A. Khan, A. Bhattarai, J. N. Kuznia and D. T. Olson, “High Electron Mobility Transistor Based on a GaN-AlX, Ga1-XN Heterojunction,” Applied Physics Letters, Vol. 63, No. 9, 1993, pp. 1214-1215. doi:10.1063/1.109775
[3] L. Semra, A. Teliaa and A. Soltani, “Trap Characterization in AlGaN/GaN HEMT by Analyzing Frequency Dispersion in Capacitance and Conductance,” Surface and Interface Analysis, Vol.42, 2010, pp. 799-802. doi:10.1002/sia.3462
[4] H. Kim, S. J. Park and H. Hwang, “Design and Fabrication of Highly Efficient GaN-Based Light-Emitting Diodes,” IEEE, Vol. 49, No. 10, 2002, pp. 1715-1721.
[5] R. D. Dupuis, “Epitaxial Growth of III-V Nitride Semiconductors by Metalorganic Chemical Vapor Deposition,” Journal of Crystal Growth, Vol. 178, 1997, pp. 56-73. doi:10.1016/S0022-0248(97)00079-1
[6] D. C. Dumka, C. Lee, H. Q. Tserng, P. Saunier? and M. Kumar, “AlGaN/GaN HEMTs on Si Substrate with 7 W/mm Output Power Density at 10 GHz,” Electronics Letters, Vol.40, 2004, pp. 1023-1024. doi:10.1049/el:20045292
[7] A. Minko, V. Ho?l, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, C.Gaquière, D. Théron, J. C. D. Jaeger, H. Lahreche, L. Wedzikowski, R. Langer and P. Bove, “AlGaN-GaN HEMTs on Si with Power Density Performance of 1.9 W/mm at 10 GHz,” IEEE Electron Device Letters, Vol. 25, 2004, pp. 453-455. doi:10.1109/LED.2004.830272
[8] M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame and L. F. Reitz, “High-Responsivity photo-Conductive Ultraviolet Sensors Based on Insula- ting Single-Crystal GaN Epilayers,” Applied Physics Letters, Vol. 60, 1992, pp. 2917-2919. doi:10.1063/1.106819
[9] S. Sttrite and H. Morko?, “GaN, AlN, and InN: A Review,” Journal of Vacuum Science & Technology B, Vol. 10, 1992, pp. 1237-1266. doi:10.1116/1.585897
[10] M. A. Khan, J. N. Kuznia, D. T. Olson, M. Blasingame and A. R. Bhattarai, “Schottky Barrier Photodetector Based on Mg‐Doped p‐Type GaN Films,” Applied Physics Letters, Vol.63, 1993,pp. 2455-2456. doi:10.1063/1.110473
[11] X. L. Wang, T. S. Shen, H. L. Xiao, C. M. Wang, G. X. Hu, W. J. Luo, J. Tang, L. C. Guo and J. M. Li, “High- Performance 2 mm Gate Width GaN HEMTs on 6H-SiC with Output Power of 22.4 W@ 8 GHz,” Solid-State Electron, Vol. 52, 2008, pp. 926-929. doi:10.1016/j.sse.2007.12.014
[12] D. Ducatteau, A. Minko, V. Ho?l, E. Morvan, E. Delos, B. Grimbert, H. Lahreche, P. Bove, C. Gaquière, J. C. De Jaeger and S. Delage, “Output Power Density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si Substrate,” IEEE Electron Device Letters, Vol. 27, 2006, pp. 7-9. doi:10.1109/LED.2005.860385
[13] T. Ito, Y. Nomura, S. L. Selvaraj and T. Egawa,” Com- parison of Electrical Properties in GaN Grown on Si(111) and c-Sapphire Substrate by MOVPE,” Journal of Crystal Growth, Vol. 310, 2008, pp. 4896-4899. doi:10.1016/j.jcrysgro.2008.08.029
[14] N. Maeda, K. Tsubaki, T. Saitoh, T. Tawara and N. Ko- bayashi, “High-Temperature Electron Transport Proper- ties in AlGaN/GaN Heterostructures,” Applied Physics Letters, Vol. 79, 2001, pp. 1634-1636. doi:10.1063/1.1400779
[15] N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida and N. Ko- bayashi, “Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Single- and Double-Heteros- tructure Field Effect Transistors,” Materials Science and Engineering: B, Vol. 82, 2001, pp. 232-237. doi:10.1016/S0921-5107(01)00604-3
[16] N. Maeda, T. Nishida, N. Kobayashi and M. Tomizawa, “Two-Dimensional Electron-Gas Density in AlXGa1?XN/ GaN Heterostructure Field-Effect Transistors,” Applied Physics Letters, Vol. 73, No. 13, 1998, pp. 1856-1858. doi:10.1063/1.122305
[17] P. B. Klein, “Photoionization Spectroscopy in AlGaN/ GaN High Electron Mobility Transistors,” Journal of Applied Physics, Vol. 92, 2002, pp. 5498-5502. doi:10.1063/1.1510564
[18] S. Arulkumaran, T. Egawa, H. Ishikawa and T. Jimbo, “Comparative Study of Drain-Current Collapse in Al- GaN/GaN High-Electron-Mobility Transistors on Sapphire and Semi-Insulating SiC,” Applied Physics Letters, Vol. 81, No. 16, 2002, pp. 3073-3075. doi:10.1063/1.1512820
[19] O. Mitrofanov, M. Manfra and N. Weimann, “Impact of Si Doping on Radio Frequency Dispersion in Unpassivated GaN/AlGaN/GaN High-Electron-Mobility Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy,” Applied Physics Letters, Vol. 82, No. 24, 2003, pp. 4361-4363. doi:10.1063/1.1582373
[20] A. P. Zhang, L. B. Rowland, E. B. Kaminsky, V. Tilak, J. C. Grande, J. Teetsov, A. Vertiatchikh and L. F. Eastman, “Correlation of Device Performance and Defects in Al- GaN/GaN High-Electron Mobility Transistors,” Journal of Electronic Materials, Vol. 32, No. 5, 2003, pp. 388- 394. doi:10.1007/s11664-003-0163-6
[21] M. Gassoumi, J. M. Bluet, G. Guillot, C. Gaquière and H. Maaref, “Characterization of Deep Levels in High Electron Mobility Transistor by Conductance Deep Level Transient Spectroscopy,” Materials Science and Engineering C, Vol. 28, 2008, pp. 787-790. doi:10.1016/j.msec.2007.10.068
[22] R. Mosca, E. Gombia, A. Passaseo, V. Tasco, M. Peroni and P. Romanini, “DLTS Characterization of Silicon Nitride Passivated AlGaN/GaN Heterostructures,” Superlattices and Microstructures, Vol. 36, 2004, pp. 425-433. doi:10.1016/j.spmi.2004.09.006
[23] V. Hoel, N. Vellas, C. Gaquiere, J. C. DeJaeger, Y. Cordier, F. Semond, F. Natali and J. Massies, “High-Power AlGaN/GaN HEMTs on Resistive Silicon Substrate,” Electronics Letters, Vol. 38, 2002, pp. 750-752. doi:10.1049/el:20020522
[24] J. Osaka, Y. Ohno, S. Kishimoto, K. Maezawa and T. Mizutani, “Deep Levels in n-Type AlGaN Grown by Hydride Vapor-Phase Epitaxy on Sapphire Characterized by Deep-Level Transient Spectroscopy,” Applied Physics Letters, Vol. 87, 2005, pp. 222112-1-222112-3. doi:10.1063/1.2137901
[25] N. Sghaier , M. Trabelsi , N. Yacoubi, J. M. Bluet, A. Soui?, G. Guillot, C. Gaquière and J. C. Dejaeger, “Traps Centers and Deep Defects Contribution in Current Instabilities for AlGaN/GaN HEMT’s on Silicon and Sapphire Substrates,” Microelectronics Journal, Vol. 37, 2006, pp. 363-370. doi:10.1016/j.mejo.2005.05.014
[26] S. Nozaki, H. Feick, E. R. Weber, M. Micovic and C. Nguyen, “Compression of the dc Drain Current by Electron Trapping in AlGaN/GaN Modulation Doped Field- Effect Transistors,” Applied Physics Letters, Vol.78, No. 19, 2001, pp. 2896-2898. doi:10.1063/1.1367274
[27] H. Tang, Z. Q. Fang, S. Rolfe, J. A. Bardwell and S. Raymond, “Growth Kinetics and Electronic Properties of Unintentionally Doped Semi-Insulating GaN on SiC and High-Resistivity GaN on Sapphire Grown by Ammonia Molecular-Beam Epitaxy,” Journal of Applied Physics, Vol. 107, 2010, pp. 103701-1-103701-12.
[28] Z.-Q. Fang, D. C. Look, D. H. Kim and I. Adesida, “Traps in AlGaN/GaN/SiC Heterostructures Studied by Deep Level Transient Spectroscopy,” Applied Physics Letters, Vol. 87, 2005, pp. 182115-1-182115-3. doi:10.1063/1.2126145
[29] Z. H. Mahmood, A. P. Shah, A. Kadir, M. R.Gokhale, A. Bhattachary and B. M. Arora, “Charge Deep Level Tran- sient Spectroscopy of Electron Traps in MOVPE Grown n-GaN on Sapphire,” physica status solidi, Vol. 245, 2008, pp. 2567-2571.

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