Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications

Abstract

The fundamental operating principle of a Class F power amplifier and the factors aiding or affecting Class F performance were explicated previously. A Class F power amplifier design which satisfies WCDMA specifications is explained in this paper. The Class F amplifier was designed by employing Motorola’s LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor models and we simulated its performance by means of ADS. A variety of procedures were applied in the process of designing Class F amplifier, namely, DC simulation, bias point selection, source-pull and load-pull characterization, input and output matching circuit design and the design of suitable harmonic traps, which are explained here.

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M. Sabaghi, S. Hadianamrei, M. Rahnama and M. Lahiji, "Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications," International Journal of Communications, Network and System Sciences, Vol. 4 No. 10, 2011, pp. 662-666. doi: 10.4236/ijcns.2011.410081.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] N. Uddin, “Analysis and Design of GaN Based Doherty Power Amplifier for Wireless Power Application,” Master’s Thesis Report, University of Kassel, Kassel, 2007.
[2] H. Panesar, “High-Efficiency Switched-Mode Power Amplifier Using Gallium Nitride on Silicon HEMT Technology,” Master’s Thesis Report, Carleton Univer- sity, Ottawa, 2007.
[3] J. Noonan, “The Design of a High Efficiency RF Power Amplifier for an MCM Process,” Master’s Thesis Report, Massachusetts Institute of Technology, Cambridge, 2005.
[4] M. Venkataramani, “Efficiency Improvement of WCD- MA Base Station Transmitters using Class-F Power Amplifiers,” Master’s Thesis Report, The University of Virginia, Blacksburg, 2004.
[5] F. H. Raab, “Class-F Power Amplifiers with Maximally Flat Waveforms,” IEEE Transactions on Microwave Theory and Techniques, Vol. 45, No. 11, 1997, pp. 2007-2012. doi:10.1109/22.644215
[6] M. Wren and T. J. Brazil, “Experimental Class-F Power Amplifier Design Using Computationally Efficient and Accurate Large-Signal pHEMT Model,” IEEE Transac- tions on Microwave Theory and Techniques, Vol. 53, No. 5, May 2005, pp. 1723-1731. doi:10.1109/TMTT.2005.847108
[7] S. Gao, P. Butterworth, S. Ooi and A. Sambell, “High-Efficiency Power Amplifier Design Including Input Harmonic Termination,” IEEE Microwave and Wireless Component Letters, Vol. 16, February 2005, pp. 81-83.
[8] J. Sun, B. Li and Y. W. M. Chia, “A Novel CDMA Power Amplifier for High Efficiency and Linearity,” IEEE Proceedings of Vehicular Technology Conference, Shenzhen, 1990, pp. 2044-2047.
[9] I. Lin, M. Devincentis, C. Caloz and T. Itoh, “Arbitrary Dual-Band Components Using Composite Right/Left- Handed Transmission lines,” IEEE Transactions on Microwave Theory and Techniques, Vol. 53, April 2005, pp. 1142-1149.
[10] Y. Sub Lee, M. Woo Lee and Y. Ha Jeong, “High-Efficiency Class-F GaN HEMT Amplifier with Simple Parasitic-Compensation Circuit,” IEEE Microwave and Wireless Components Letters, Vol. 18, January 2008, pp. 55-57.

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