Effect of dislocation scattering on electron mobility in GaN

DOI: 10.4236/ns.2011.39106   PDF   HTML     5,331 Downloads   9,929 Views   Citations


This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.

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P., R. and Mallick, P. (2011) Effect of dislocation scattering on electron mobility in GaN. Natural Science, 3, 812-815. doi: 10.4236/ns.2011.39106.

Conflicts of Interest

The authors declare no conflicts of interest.


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