Effect of dislocation scattering on electron mobility in GaN

R. Karthik, Uma Sathyakam P., P. S. Mallick

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DOI: 10.4236/ns.2011.39106                

Abstract

This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.

Keywords

Dislocation Scattering; Electron Mobility; Galium Nitride; Scattering

Conflicts of Interest

The authors declare no conflicts of interest.

References

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